View RSJ151P10TL_9089215.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

datasheet www.rohm.com ? 2013 rohm co., ltd. all rights reserved. rsj151p10 pch 100v 15a power mosfet junction temperature t j 150 c range of storage temperature t stg - 55 to + 150 c gate - source voltage v gss ? 20 v p d 50 w mj a e as *3 i ar *3 33 - 15 p d 1.35 w avalanche energy, single pulse avalanche current t c = 25c t a = 25c *4 power dissipation pulsed drain current i d,pulse *2 ? 30 a t c = 25c t c = 100c continuous drain current i d *1 a ? 15 i d *1 ? 8 a drain - source voltage v dss - 100 v automotive solenoid drive taping code tl marking rsj151p10 l absolute maximum ratings (t a = 25c) parameter symbol value unit 6) 100% avalanche tested l packaging specifications type packaging taping l application reel size (mm) 330 switching power supply tape width (mm) 16 automotive motor drive basic ordering unit (pcs) 2,500 l features l inner circuit 1) low on-resistance. 2) fast switching speed. 3) drive circuits can be simple. 4) parallel use is easy. 5) pb-free lead plating ; rohs compliant l outline v dss - 100v lpts (sc-83) r ds(on) (max.) 120m w i d - 15a p d 50w (2) (1) (3) * 1 esd protection diode * 2 body diode (1) gate (2) drain (3) source 1/12 2013.01 - rev.b to-263(d2pak) downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 thermal resistance, junction - ambient m w v gs = - 10v, i d = - 15a t j = 125c forward transfer admittance v ds = - 10v, i d = - 15a 13 26 - s static drain - source on - state resistance v gs = - 10v, i d = - 15a - 85 120 - 155 ? 10 m a t j = 125c v gate threshold voltage v gs (th) v ds = - 10v, i d = - 1ma - 1.0 - - 2.5 gate - source leakage current i gss v gs = ? 20v, v ds = 0v - - m a min. typ. max. c v - 100 - - - - 265 - 2.5 c/w - - c/w 92.6 - values unit min. typ. max. g fs v ds = - 100v, v gs = 0v t j = 25c v ds = - 100v, v gs = 0v l thermal resistance parameter symbol symbol conditions v gs = 0v, i d = - 1ma t sold thermal resistance, junction - ambient *4 soldering temperature, wavesoldering for 10s r thja r thjc v gs = - 4.5v, i d = - 15a 220 r ds(on) *5 l electrical characteristics (t a = 25c) parameter drain - source breakdown voltage zero gate voltage drain current v (br)dss i dss - - - - 1 - - 100 values unit - 95 135 v gs = - 4.0v, i d = - 15a - 100 140 2/12 2013.01 - rev.b downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 l ? 200 m h, v dd = - 50v, rg = 10 w , starting t j = 25c *4 mounted on a epoxy pcb fr4 (20mm 30mm 0.8mm) *5 pulsed - - v i d = - 15a v gs = - 10v - 10 - gate - drain charge q gd *5 - 10 - nc gate - source charge q gs *5 total gate charge q g *5 v dd ? - 50v - - l gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. turn - on delay time t d(on) *5 v dd ? - 50v, v gs = - 10v - 30 - ns rise time t r *5 i d = - 7.5a - 40 - turn - off delay time t d(off) *5 r l = 12 w - 165 - fall time t f *5 r g = 10 w - 95 pf output capacitance c oss v ds = - 25v - 160 - reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v - 3800 - - 100 - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. m c - 30 a forward voltage v sd *5 v gs = 0v, i s = - 15a - - - 1.2 v 60 - ns t c = 25c reverse recovery time t rr *5 i s *1 - - - 15 a pulsed source current i sm *2 - - continuous source current 64 - i s = - 15a di/dt = - 100a/ m s reverse recovery charge q rr *5 - 145 - l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. gate plateau voltage v (plateau) v dd ? - 50v, i d = - 15a - - 3.1 3/12 2013.01 - rev.b downloaded from: http:///
rsj151p10 l electrical characteristic curves 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 0.01 0.1 1 10 0.00010.001 0.01 0.1 1 10 100 1000 t a =25 oc r th(j-c)(t) = r (t) r th(ch-c) r th(j-c) = 2.5 oc /w top d = 1 d = 0.5 d = 0.1 d = 0.05 d = 0.01 d = single 0.01 0.1 1 10 100 0.1 1 10 100 1000 t a =25 oc single pulse p w = 100us p w = 1ms p w = 10ms operation in this area is limited by r ds(on) fig.1 power dissipation derating curve fig.2 maximum safe operating area power dissipation : p d /p d max. [%] drain current : -i d [a] fig.3 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] junction temperature : t j [ c] drain - source voltage : -v ds [v] 4/12 2013.01 - rev.b downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 l electrical characteristic curves 0.1 1 10 100 0.01 0.1 1 10 100 v dd = - 50v,r g =25 w v gf = - 10v,v gr =0v starting t ch =25 oc 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 0.2 0.4 0.6 0.8 1 t a =25 oc pulsed v gs =10.0v v gs =4.0v v gs =4.5v v gs =3.5v v gs =3.0v 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 2 4 6 8 10 v gs =2.0v v gs =10.0v v gs =3.5v v gs =4.0v v gs =3.0v t a =25 oc pulsed fig.6 typical output characteristics(i) drain current : -i d [a] drain - source voltage : -v ds [v] fig.7 typical output characteristics(ii) drain current : -i d [a] drain - source voltage : -v ds [v] fig.4 avalanche current vs inductive load avalanche current : -i as [a] coil inductance : l [mh] fig.5 avalanche energy derating curve vs junction temperature avalanche energy : e as / e as max. [%] junction temperature : t j [ c] 5/12 2013.01 - rev.b downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 l electrical characteristic curves 60 70 80 90 100 110 120 -50 0 50 100 150 v gs = 0v i d = - 1ma 0.001 0.01 0.1 1 10 100 0 1 2 3 4 5 v ds = - 10 v t a = 125 oc t a = 75 oc t a = 25 oc t a = - 25 oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 v ds = - 10v i d = - 1ma 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = - 10 v t a = - 25 oc t a =25 oc t a =75 oc t a =125 oc fig.10 gate threshold voltage vs. junction temperature gate threshold voltage : -v gs(th) [v] junction temperature : t j [ c] fig.11 transconductance vs. drain current transconductance : g fs [s] drain current : -i d [a] fig.8 breakdown voltage vs. junction temperature junction temperature : t j [ c] fig.9 typical transfer characteristics gate - source voltage : -v gs [v] drain current : -i d [a] normarize drain - source breakdown voltage : -v (br)dss [v] 6/12 2013.01 - rev.b downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 l electrical characteristic curves 0 50 100 150 200 250 300 350 400 0 5 10 15 t a =25 oc i d = - 15a i d = - 7.5a 10 100 1000 0.01 0.1 1 10 100 t a =25 oc v gs = - 10v v gs = - 4.5v v gs = - 4.0v 0 50 100 150 200 -50 0 50 100 150 v gs = - 10v i d = - 15a fig.13 static drain - source on - state resistance vs. drain current(i) static drain - source on-state resistance : r ds(on) [m w ] junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [m w ] drain current : -i d [a] fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [m w ] gate - source voltage : -v gs [v] 7/12 2013.01 - rev.b downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 l electrical characteristic curves 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 10 100 1000 0.01 0.1 1 10 100 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = - 10v 10 100 1000 0.01 0.1 1 10 100 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = - 4.5v 10 100 1000 0.01 0.1 1 10 100 t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc v gs = - 4.0v fig.15 static drain - source on - state resistance vs. drain current(ii) static drain - source on-state resistance : r ds(on) [m w ] drain current : -i d [a] fig.16 static drain - source on - state resistance vs. drain current(iii) static drain - source on-state resistance : r ds(on) [m w ] drain current : -i d [a] fig.18 drain current derating curve drain current dissipation : i d /i d max. (%) fig.17 static drain - source on - state resistance vs. drain current(iv) static drain - source on-state resistance : r ds(on) [m w ] drain current : -i d [a] junction temperature : t j [oc] 8/12 2013.01 - rev.b downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 l electrical characteristic curves 10 100 1000 10000 100000 0.01 0.1 1 10 100 c oss c rss c iss t a = 25oc f = 1mhz v gs = 0v 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) t a =25 oc v dd = - 50 v v gs = - 10 v r g =10 w 0 5 10 0 10 20 30 40 50 60 70 t a =25 oc v dd = - 50 v i d = - 15 a r g =10 w 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs =0v fig.19 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : -v ds [v] fig.21 dynamic input characteristics gate - source voltage : -v gs [v] total gate charge : q g [nc] fig.20 switching characteristics switching time : t [ns] drain current : -i d [a] fig.22 source current vs. source - drain voltage source current : -i s [a] source-drain voltage : -v sd [v] 9/12 2013.01 - rev.b downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 l electrical characteristic curves 1 10 100 0.1 1 10 100 t a =25 oc di / dt = - 100a / m s v gs = 0v fig23 reverse recovery time vs.source current reverse recovery time : trr [ns] source current : -i s [a] 10/12 2013.01 - rev.b downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform 11/12 2013.01 - rev.b downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet rsj151p10 l dimensions (unit : mm) dimension in mm / inches lpts l3 b2 b3 e b l2 e c1 a2 l1 c h a3 lp l l4 l3 l2 l1 b6 x b a b a1 e b5 d a pattern of terminal position areas [not a recommended pattern of soldering pads] min max min max a1 0.00 0.30 0.000 0.012 a2 4.30 4.70 0.169 0.185 a3 b 0.68 0.98 0.027 0.039 b2 b3 1.14 1.44 0.045 0.057 c 0.30 0.60 0.012 0.024 c1 1.10 1.50 0.043 0.059 d 9.80 10.40 0.386 0.409 e 8.80 9.20 0.346 0.362 e h e 12.80 13.40 0.504 0.528 l 2.70 3.30 0.106 0.130 l1 0.90 1.50 0.035 0.059 l2 l3 l4 lp 0.90 1.50 0.035 0.059 x - 0.25 - 0.010 min max min max b5 - 1.23 - 0.049 b6 - 10.40 - 0.409 l1 - 2.10 - 0.083 l2 - 7.55 - 0.297 l3 - 13.40 - 0.528 7.25 0.285 1.00 0.039 dim milimeters inches 8.90 0.350 2.54 0.100 1.10 0.043 dim milimeters inches 0.25 0.010 12/12 2013.01 - rev.b downloaded from: http:///
r1102 a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representativ e and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) 14) downloaded from: http:///

▲Up To Search▲

Price & Availability of RSJ151P10TL

	To Download RSJ151P10TL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .